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FSU01LG
General Purpose GaAs FET FEATURES
* High Output Power: P1dB = 20.0dBm (Typ.) * High Associated Gain: G1dB = 19.0dB (Typ.) * Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz * Low Bias Conditions: VDS=3V, 10mA * Cost Effective Hermetic Microstrip Package * Tape and Reel Available
DESCRIPTION
The FSU01LG is a high performance, low noise, GaAs FET designed for PCS/PCN applications as a driver in the 2GHz band.
Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C)
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature
Note: Mounted on Al2O3 board (30 x 30 x 0.65mm) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 6 volts. 2. The forward and reverse gate currents should not exceed 0.7 and -0.1 mA respectively with gate resistance of 2000. 3. The operating channel temperature (Tch) should not exceed 145C.
Symbol VDS VGS Ptot Tstg Tch
Condition
Rating 12.0 -5
Unit V V mW C C
Note
375 -65 to +175 175
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C)
Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Noise Figure Associated Gain Thermal Resistance AVAILABLE CASE STYLES: LG
Note: The RF parameters are measured on a lot basis by sample testing at an AQL = 0.1%, Level-II inspection. Any lot failure shall be 100% retested.
Symbol IDSS gm Vp VGSO P1dB G1dB NF Gas Rth
Test Conditions VDS = 3V, VGS = 0V VDS = 3V, IDS = 27mA VDS = 3V, IDS = 2.7mA IGS = -2.7A VDS = 6V IDS = 40mA f = 2GHz VDS = 3V IDS = 10mA f = 2GHz Channel to Case
Min. 35 -0.7 -5 19.0 18.0 -
Limit Typ. Max. 55 75 50 -1.2 20.0 19.0 0.55 18.5 300 -1.7 400
Unit mA mS V V dBm dB dB dB C/W
G.C.P.: Gain Compression Point
Edition 1.2 July 1999
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FSU01LG
General Purpose GaAs FET
POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
400 Total Power Dissipation (mW) 60 Drain Current (mA) 300 50
-0.2V VGS =0V
200
40 30 20 10
-0.4V -0.6V -0.8V -1.0V -1.2V
100
0
50
100
150
200
1
2
3
4
5
Case Temperature (C)
Drain-Source Voltage (V)
ASSOCIATED GAIN vs. DRAIN-SOURCE CURRENT IDS = 10mA f = 2.0 GHz 19.5 Associated Gain (dB) 19.0 18.5 18.0 17.5
VDS = 6V 5V
NOISE FIGURE vs. DRAIN-SOURCE CURRENT IDS = 10mA f = 2.0 GHz 0.9
VDS = 6V
Noise Figure (dB)
4V
0.8 0.7 0.6 0.5
5V 4V 2, 3V
2V
10
20
30
40
10
20
30
40
Drain-Source Current (mA)
Drain-Source Current (mA)
2
FSU01LG
General Purpose GaAs FET
+j50 +j100 +j25
2 3 4 GHz
S11 S22
+90
0.2
S21 S12
+j10
+j250
1 2 1 4 GHz 0.4 GHz 4 0.4 GHz 3
0
10
25
50
100
250
0.4 GHz 0.4 GHz
180
3
2
1
.05
0.1
0
SCALE FOR |S21|
SCALE FOR |S12|
1
-j10
2 4 GHz 4 GHz 3 1
-j250
-j25
3
2
-j100 -90
-j50
S-PARAMETERS VDS =6V, IDS = 40mA FREQUENCY (MHZ)
400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 3200 3400 3600 3800 4000
S11 MAG
.987 .985 .974 .966 .954 .936 .935 .910 .904 .888 .871 .856 .844 .829 .812 .798 .788 .779 .769
S21 ANG
-13.8 -20.3 -27.1 -34.1 -40.0 -47.0 -53.3 -58.7 -65.4 -71.0 -77.0 -82.5 -88.1 -93.3 -98.4 -103.1 -107.9 -112.6 -117.3
S12 ANG
168.3 162.8 157.0 151.3 146.4 140.5 135.2 130.8 125.2 120.7 115.5 110.9 106.2 101.9 97.7 93.8 89.7 85.6 81.7
S22 ANG
77.9 76.2 72.0 68.6 65.2 60.3 56.5 51.8 48.8 45.2 42.6 39.5 35.7 30.9 27.2 26.0 22.9 20.9 19.4
MAG
4.507 4.488 4.421 4.367 4.309 4.212 4.158 4.037 3.980 3.885 3.797 3.696 3.609 3.511 3.400 3.323 3.249 3.176 3.101
MAG
.011 .016 .021 .026 .030 .035 .038 .043 .047 .049 .052 .055 .057 .060 .060 .061 .062 .063 .063
MAG
.812 .812 .807 .803 .793 .786 .778 .766 .761 .748 .739 .729 .716 .704 .692 .687 .681 .674 .668
ANG
-6.7 -10.0 -13.2 -16.4 -19.8 -23.0 -25.8 -28.9 -31.8 -34.3 -37.5 -40.2 -43.0 -45.8 -47.9 -50.3 -52.8 -55.3 -58.0
Download S-Parameters, click here
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FSU01LG
General Purpose GaAs FET
OUTPUT POWER & IM3 vs. INPUT POWER
20 18 16
Total Output Power (dBm)
14 12 10 8 6 4 2 0 -2 -4 -6
VDS = 6V f = 2 GHz f = +1 MHz IDS = 40mA
Pout
Single Tone 2-Tone
-10
-20
-40
IM3
-50
-12 -10 -8 -6
-4
-2
0
2
4
6
-60
Total Input Power (dBm)
4
IM3 (dBc)
-30
FSU01LG
General Purpose GaAs FET
Case Style "LG" Metal-Ceramic Package
4.780.5 1.50.3 (0.059) 1.780.15 1.50.3 (0.07) (0.059)
1.50.3 (0.059)
1.0 (0.039)
1
1.780.15 1.50.3 (0.07) (0.059)
4.780.5
4 3
2
0.5 (0.02)
Gold Plated Leads
1.3 Max (0.051)
1. 2. 3. 4.
0.1 (0.004)
Gate Source Drain Source
Unit: mm(inches)
For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:
* Do not put these products into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200
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